A PROPOSAL FOR DETERMINATION OF BAND-OFFSET AT A SEMICONDUCTOR HETEROJUNCTION

Authors
LAN S YANG CQ XU WJ LIU HD
Citation
S. Lan et al., A PROPOSAL FOR DETERMINATION OF BAND-OFFSET AT A SEMICONDUCTOR HETEROJUNCTION, Journal of applied physics, 79(4), 1996, pp. 2162-2164
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
4
Year of publication
1996
Pages
2162 - 2164
Database
ISI
SICI code
0021-8979(1996)79:4<2162:APFDOB>2.0.ZU;2-6
Abstract
We propose a method to determine the band offset of a heterojunction b ased on the elimination of the diffusion potential. In0.5Ga0.5/GaAs he terojunction samples were used for demonstration of this method. As ma ny error sources related to the determination of diffusion potential a re avoided in our case, the more accurate value of 137 +/- 5 meV has b een obtained for the conduction-band discontinuity. (C) 1996 American Institute of Physics.