We present a photoluminescence study of non-stoichiometric polycristal
line cadmium selenide films. The films were grown by a technique combi
ning the methods of close spaced vapor and hot wall deposition. The an
alized films were deposited on silicon, quartz and glass substrates ma
intaining the growth parameters fixed. The luminescence spectra of the
films show emission mechanisms of common or similar origin thus refle
cting the same kind of impurity/defect levels generated during the gro
wth.