J. Tyczkowski et P. Kazimierski, AN AMORPHOUS DIELECTRIC-TO-AMORPHOUS SEMICONDUCTOR TRANSITION IN HYDROGENATED CARBON-GERMANIUM FILMS, Journal of physics. D, Applied physics, 27(1), 1994, pp. 179-181
Electronic properties of a-Ge(X)O(Y):H films plasma-deposited in a new
type of audiofrequency reactor with three parallel electrodes have be
en investigated. It has been found that small changes in coupling capa
city in the reactor can cause a drastic step change in the electronic
structure of the deposited films. This effect is attributed to a trans
ition from amorphous dielectric to amorphous semiconductor.