AN AMORPHOUS DIELECTRIC-TO-AMORPHOUS SEMICONDUCTOR TRANSITION IN HYDROGENATED CARBON-GERMANIUM FILMS

Authors
TYCZKOWSKI J KAZIMIERSKI P
Citation
J. Tyczkowski et P. Kazimierski, AN AMORPHOUS DIELECTRIC-TO-AMORPHOUS SEMICONDUCTOR TRANSITION IN HYDROGENATED CARBON-GERMANIUM FILMS, Journal of physics. D, Applied physics, 27(1), 1994, pp. 179-181
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
27
Issue
1
Year of publication
1994
Pages
179 - 181
Database
ISI
SICI code
0022-3727(1994)27:1<179:AADSTI>2.0.ZU;2-A
Abstract
Electronic properties of a-Ge(X)O(Y):H films plasma-deposited in a new type of audiofrequency reactor with three parallel electrodes have be en investigated. It has been found that small changes in coupling capa city in the reactor can cause a drastic step change in the electronic structure of the deposited films. This effect is attributed to a trans ition from amorphous dielectric to amorphous semiconductor.