Dm. Rowe et al., THE ROLE OF OXYGEN IN INCREASING THE CARRIER CONCENTRATION OF N-TYPE SILICON-GERMANIUM GALLIUM-PHOSPHIDE ALLOYS, Journal of physics. D, Applied physics, 27(1), 1994, pp. 182-184
The role of oxygen in increasing the carrier concentraction of n-type
silicon germanium-gallium phosphide alloys was investigated. It was fo
und that silicon germanium-gallium phosphide alloy without additional
dopant prepared by mechanical alloying and cold pressing is p-type if
heat treated in argon or hydrogen, but is n-type if heat treated in ai
r. The results indicate that carrier enhancement probably relates to t
he dissociation of gallium phosphide followed by oxidation of the diss
ociated gallium and phosphorus. A possible mechanism for carrier enhan
cement in n-type silicon germanium-gallium phosphide alloys is propose
d.