FORMATION OF GE NANOCRYSTALS WITH SHARP SIZE DISTRIBUTION - STRUCTURAL AND OPTICAL CHARACTERIZATION

Authors
ZACHARIAS M BLASING J CHRISTEN J VEIT P DIETRICH B BIMBERG D
Citation
M. Zacharias et al., FORMATION OF GE NANOCRYSTALS WITH SHARP SIZE DISTRIBUTION - STRUCTURAL AND OPTICAL CHARACTERIZATION, Superlattices and microstructures, 18(2), 1995, pp. 139-145
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
18
Issue
2
Year of publication
1995
Pages
139 - 145
Database
ISI
SICI code
0749-6036(1995)18:2<139:FOGNWS>2.0.ZU;2-F
Abstract
We have studied the formation of Ge nanocrystals in a SiOx matrix usin g high-resolution electron microscopy, Raman- and luminescence spectro scopy. The room temperature cathodoluminescence centered at 2.2-2.4 eV and the photoluminescence at 2.4 eV are correlated with the crystalli zation of the as-prepared Ge cluster. However, no peak shift was found in spite of the sharp size distribution of the particles. The data su ggest that quantum confinement is not the origin of the luminescence. (C) 1995 Academic Press Limited