SPECTROSCOPY STUDIES OF HIGHLY ACCEPTOR-DOPED GAAS ALGAAS QUANTUM-WELLS/

Citation
Ac. Ferreira et al., SPECTROSCOPY STUDIES OF HIGHLY ACCEPTOR-DOPED GAAS ALGAAS QUANTUM-WELLS/, Superlattices and microstructures, 18(2), 1995, pp. 153-159
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
18
Issue
2
Year of publication
1995
Pages
153 - 159
Database
ISI
SICI code
0749-6036(1995)18:2<153:SSOHAG>2.0.ZU;2-L
Abstract
We present a theoretical and experimental study of optical properties on highly acceptor doped QWs. Steady state photoluminescence (PL) and PL excitation (PLE) results are compared with theoretical calculations involving exchange and correlation effects for the electron-hole syst em and their interaction with acceptor ions. We have studied the effec ts of impurity doping at levels varying from 10(8) up to 10(13) cm(-2) . Excitons can still be detected at high hole concentrations above the degenerate limit. They survive due to the inefficiency of screening i n the 2D system. (C) 1995 Academic Press Limited