STUDY ON ELECTRICAL AND PHOTOELECTRICAL BEHAVIOR OF UNDOPED AND DOPEDFURAZANO[3,4-B]PIPERAZINE (FP) THIN-FILM DEVICES

Furazano[3,4-b] piperazine (FP), a system where the furazan ring is fu sed to the saturated heterocyclic ring, was synthesized by oximation o f glyoxal, followed by chlorination and then condensation with ethylen e diamines to give 2,3-piperazine dione dioxime, which on further cycl odehydration results in the desired furazano piperazine. The material was doped with FeCl3 and CuCl2 in acidic medium. Optical properties we re studied in the UV-Vis-IR region. Electrical and photoelectrical pro perties of Al/FP/ITO, Ag/FP/ITO, Al/Fe-doped FP/ITO and Al/Cu-doped FP /ITO devices were observed. I-V and C-V measurements reveal the format ion of the Schottky barrier at Al/FP interfaces. This indicates that F P behaves as a p-type organic semiconductor. J-V characteristics of th e Al/FP/ITO device show ohmic conduction in the low voltage region and space charge limited conduction at the high voltage region. Various e lectrical and photovoltaic parameters were calculated from the analysi s of I-V and C-V data and are discussed in detail.