ELECTRICAL DETECTION OF ELECTRON-NUCLEAR DOUBLE-RESONANCE IN SILICON

Electrical detection of electron nuclear double resonance (EDENDOR) is demonstrated using shallow P donors in silicon. The EDENDOR spectra a re compared with conventional ENDOR spectra. With EDENDOR, both the P- 31 hyperfine as well as Si-29 superhyperfine interactions could be res olved. The sensitivity of EDENDOR seems higher compared to conventiona l ENDOR, especially for the Si-29 ligands. EDENDOR is particularly sui table for the study of the microscopic structure of point defects in s emiconductors, especially for detection of paramagnetic centers that a re present in low concentrations and in small volumes. (C) 1996 Americ an Institute of Physics.