ORGANIC FIELD-EFFECT BIPOLAR-TRANSISTORS

Citation
A. Dodabalapur et al., ORGANIC FIELD-EFFECT BIPOLAR-TRANSISTORS, Applied physics letters, 68(8), 1996, pp. 1108-1110
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
8
Year of publication
1996
Pages
1108 - 1110
Database
ISI
SICI code
0003-6951(1996)68:8<1108:OFB>2.0.ZU;2-X
Abstract
Organic field-effect transistors (FETs) which employ two carefully sel ected active materials can function as n channel, p channel, or both n - and p-channel devices. It is shown that under an appropriate set of bias conditions the channel current in FETs with alpha-hexathienylene (alpha-6T) and C-60 active layers consist of electron and hole compone nts that are injected from the source and drain contacts into the C-60 and alpha-6T layers, respectively. (C) 1996 American Institute of Phy sics.