ROLE OF C-CLUSTER AND B-CLUSTER IN TRANSIENT DIFFUSION OF B IN SILICON

Authors
COWERN NEB CACCIATO A CUSTER JS SARIS FW VANDERVORST W
Citation
Neb. Cowern et al., ROLE OF C-CLUSTER AND B-CLUSTER IN TRANSIENT DIFFUSION OF B IN SILICON, Applied physics letters, 68(8), 1996, pp. 1150-1152
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
8
Year of publication
1996
Pages
1150 - 1152
Database
ISI
SICI code
0003-6951(1996)68:8<1150:ROCABI>2.0.ZU;2-S
Abstract
Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clus ters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is approximate to 1.15 for C and similar to 1 for B, consistent with a volume compensation mechanism. (C) 1996 Ame rican Institute of Physics.