GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY (VOL 67, PG 1865, 1995)

Authors
KOLODZEY J ONEIL PA ZHANG S ORNER BA ROE K UNRUH KM SWANN CP WAITE MM
Citation
J. Kolodzey et al., GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY (VOL 67, PG 1865, 1995), Applied physics letters, 68(8), 1996, pp. 1168-1168
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
8
Year of publication
1996
Pages
1168 - 1168
Database
ISI
SICI code
0003-6951(1996)68:8<1168:GOGAOS>2.0.ZU;2-I