SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY SOLID-SOURCE AND GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
VANNOSTRAND JE CHEY SJ CAHILL DG BOTCHKAREV AE MORKOC H
Citation
Je. Vannostrand et al., SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY SOLID-SOURCE AND GAS-SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 346(1-3), 1996, pp. 136-144
Citations number
47
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
346
Issue
1-3
Year of publication
1996
Pages
136 - 144
Database
ISI
SICI code
0039-6028(1996)346:1-3<136:SOGGBS>2.0.ZU;2-8
Abstract
Scanning tunneling microscopy is used to characterize the surface of h omoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2 degrees towards [110]. Films are grown using solid-source (As,) an d gas-source (AsH3) arsenic at temperatures ranging from 500 to 650 de grees C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid- and gas-source molec ular beam epitaxially grown films. Further, the presence of arsenic hy drides (hydrogen) reduces the surface roughness in the multilayer grow th mode.