SYSTEMATIC DC SMALL-SIGNAL LARGE-SIGNAL ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTORS USING A NEW CONSISTENT NONLINEAR MODEL

In this paper, a new systematic approach to heterojunction bipolar tra nsistors (HBT's) characterization and modeling is presented. The propo sed approach is based on a new compact HBT nonlinear circuit model whi ch accounts for both self-heating and the temperature dependence effec ts, The model's parameters are extracted from measured de-IV character istics and S-parameters, The power characteristics of the device are t hen predicted using the extracted model without any further optimizati ons, The same model is also used for intermodulation distortion analys is, The model has been implemented in a number of commercial nonlinear simulators and in an in-house computer code, Results are presented fo r two different size devices showing good agreement with measurements.