THE USE OF STM TO STUDY METAL-FILM EPITAXY

Citation
Dd. Chambliss et al., THE USE OF STM TO STUDY METAL-FILM EPITAXY, IBM journal of research and development, 39(6), 1995, pp. 639-654
Citations number
45
Categorie Soggetti
Computer Science Hardware & Architecture
ISSN journal
00188646
Volume
39
Issue
6
Year of publication
1995
Pages
639 - 654
Database
ISI
SICI code
0018-8646(1995)39:6<639:TUOSTS>2.0.ZU;2-X
Abstract
In this paper we review work we have done at the IBM Almaden Research Center using the scanning tunneling microscope to understand the epita xial growth of metal films. In particular, we explore the important ro le of deposit-substrate interactions in controlling growth and film st ructure, both by strain of the substrate and by place-exchange intermi xing. These are illustrated first by the growth traits of Au, Ag, Ri, and Fe on Au(lll) and their relationship to the herringbone reconstruc tion. Au on Ag(110) is presented as a clear example of spontaneous pen etration of the substrate by deposited material at room temperature. F e on Cu(100) is a more subtle example of the effect of place-exchange and of ways to observe it. The martensitic transformation of thicker F e films on Cu(100) demonstrates the importance of bulklike structural changes in metastable epitaxial films.