HIGH-CONDUCTIVITY IN GALLIUM-DOPED ZINC-OXIDE POWDERS

Gallium-doped zinc oxide powders have been prepared with electrical co nductivities at 25 degrees C as high as 300 Omega(-1) cm(-1), more tha n 1000 higher than previously reported. All materials prepared can be represented as Zn1-xGaxO, Zn1-yGayO1+(y/2), or a combination of these two. For Zn1-xGaxO, the room-temperature conductivity increases monoto nically with increasing x up to 2.7%, which is the limit of Ga solubil ity for this formulation at our synthesis temperatures of 1000 to 1200 degrees C. Conductivities measured from 4.2 to 500 K showed only a ve ry small temperature dependence. An ESR peak (g = 1.96), attributed to the conduction electrons, broadens with increased doping level. The h exagonal unit-cell edges increase with increasing x over the entire ra nge of x. For the low conductivity Zn1-yGayO1+(y/2) series, the level of Ga substitution can reach at least 4.0%.