DEFECT-FORMING IN SI-SIO2 STRUCTURES IN P REBREAKDOWN ELECTRICAL FIELDS

Authors
BARABAN AP BULAVINOV VV MUSTAFA NS SOBCHENKO SA
Citation
Ap. Baraban et al., DEFECT-FORMING IN SI-SIO2 STRUCTURES IN P REBREAKDOWN ELECTRICAL FIELDS, Pis'ma v Zurnal tehniceskoj fiziki, 21(18), 1995, pp. 80-84
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
21
Issue
18
Year of publication
1995
Pages
80 - 84
Database
ISI
SICI code
0320-0116(1995)21:18<80:DISSIP>2.0.ZU;2-W