NEGATIVE MAGNETORESISTANCE IN A 2-DIMENSIONAL ELECTRONIC SYSTEM IN THE REGION OF HOPPING CONDUCTIVITY

Negative magnetoresistance which is quadratic in the magnetic field wa s detected in a Si MIS structure in the hopping-conductivity regime. A s the field increases, the magnetoresistance passes through a minimum and then rapidly increases exponentially. It was found that the positi on of the minimum H-t is virtually temperature-independent in the rang e 1.4 K < T < 4.2 K. The observed field dependence p(xx)(H) agrees wit h the theoretically predicted behavior of the magnetoresistance under conditions of electron tunneling in a continous potential. (C) 1995 Am erican Institute of Physics.