Sk. Park et Ks. Yi, THE OPTICAL-TRANSITIONS IN SYMMETRICALLY DOPED GAAS ALGAAS QUANTUM-WELLS IN THE PRESENCE OF HIGH ELECTRIC-FIELDS/, Journal of the Korean Physical Society, 29(1), 1996, pp. 99-106
The effects of the electric field and the carrier interaction on the o
ptical transitions in symmetrically doped GaAs/AlGaAs quantum wells ar
e examined as a function of the field strength F and the surface carri
er concentration N-s. An enhancement of the interband radiative recomb
ination lifetime and a reduction of the intraband electron oscillator
strength are observed. We also find that the exciton binding energies
and the effective bandgap decrease as the magnitude of either F or N-s
is increased.