THE OPTICAL-TRANSITIONS IN SYMMETRICALLY DOPED GAAS ALGAAS QUANTUM-WELLS IN THE PRESENCE OF HIGH ELECTRIC-FIELDS/

The effects of the electric field and the carrier interaction on the o ptical transitions in symmetrically doped GaAs/AlGaAs quantum wells ar e examined as a function of the field strength F and the surface carri er concentration N-s. An enhancement of the interband radiative recomb ination lifetime and a reduction of the intraband electron oscillator strength are observed. We also find that the exciton binding energies and the effective bandgap decrease as the magnitude of either F or N-s is increased.