CARRIER CONFINEMENT OF INGAASP INP QUANTUM-WIRE STRUCTURES FABRICATEDBY FOCUSED GA ION-BEAM IMPLANTATION/

InGaAsP/InP quantum wires with widths between 300 similar to 138 nm we re fabricated by Ga+ focused ion beam (FIB) implantation (dose=3x10(13 ) cm(-2), 1x10(14) cm(-2)). The 30-K photoluminescence spectra show a blue shift of up to similar to 55 meV and an increase of emission inte nsity with increasing ion dose. It is shown that these result from the carrier confinement effect in a reduced one-dimensional (1D) system a nd from a change of well composition. The potential barrier in the lat eral direction is formed by the FIB-implantation-induced high-energy g ap InGaAsP quaternary alloy. The FIB scan period dependence of the lum inescence intensity is explained by the recombination velocity at the wire and barrier interface.