A density functional formalism, based on the Harbola-Sahni approach, i
s suggested for calculating the term energies associated with open-she
ll atomic configurations. The accuracy of the method is demonstrated f
or carbon and silicon electronic configurations corresponding to singl
e- and double-electron excitations. The exchange-only energy values fo
r multiplets associated with the ground-state configuration have also
been calculated, the maximum error being 0.03% compared to the Hartree
-Fock results. The error in the single- and double-electron excitation
energies is within 4.5% compared to the experimental results.