POTENTIALS INDUCED BY THE ELECTRON-OPTICAL-PHONON INTERACTION IN A QUANTUM-WELL

The potential induced by the electron-optical-phonon interaction in a quantum well (QW) is investigated by means of the perturbation theory. We consider the interactions of an electron with both bulklike confin ed longitudinal optical (LO) phonons and four branches of interface op tical (IO) phonons. The spatial distribution V-i(z) of the induced pot ential for QW structures with different heterolayer compositions and d ifferent well widths is calculated in detail. The numerical results sh ow that the heterolayer composition of the QW plays an important role in determining the shape of V-i(z) and that the existence of IO-phonon s is important to the electronic states in QWs.