ANISOTROPIC LOCALIZATION EFFECT IN LAYERED MATERIALS

We investigate the localization properties in a highly anisotropic and intrinsically disordered layered material which is analogous to high- T-c cuprates. By varying the anisotropy of the system, which is parame terized by the interlayer hopping tp, we find a crossover from two-dim ensional (2D) to three-dimensional (3D) behavior at a critical hopping amplitude tp(c), where a mobility edge appears. We show that below th e mobility edge, the anisotropic localization effect may exist for a f inite-size system, when the ab-plane localization length is longer tha n the system size and the c-axis localization length is shorter than t he system size. Nevertheless, we argue that such an anisotropic locali zation cannot account for the ''semiconductor''-like behavior of the c -axis resistivity of high-T-c cuprates.