CHARACTERIZATION OF SILK CRYSTALLIZATION BEHAVIOR ON HIGHLY ORIENTED SUBSTRATES

Authors
CHEN CC RIOU S HSU SL STIDHAM HD
Citation
Cc. Chen et al., CHARACTERIZATION OF SILK CRYSTALLIZATION BEHAVIOR ON HIGHLY ORIENTED SUBSTRATES, Langmuir, 12(4), 1996, pp. 1035-1039
Citations number
38
Categorie Soggetti
Chemistry Physical
Journal title
Langmuir → ACNP
ISSN journal
07437463
Volume
12
Issue
4
Year of publication
1996
Pages
1035 - 1039
Database
ISI
SICI code
0743-7463(1996)12:4<1035:COSCBO>2.0.ZU;2-S
Abstract
Silk films cast from an aqueous solution onto oriented poly(tetrafluor oethylene) substrates and characterized by external reflection infrare d spectroscopy showed that the oriented poly(tetrafluoroethylene) subs trate bath promoted crystallization of the silk II in a beta-pleated s heet structure and induced orientation in the silk films, even for sil k films cast from dilute silk solutions and salt solutions. Possible n ucleation mechanisms are discussed.