WIDE-BAND TECHNIQUE MODELS PHEMTS AND GAAS-MESFETS

RAPID growth of microwave applications for pseudomorphic high-electron -mobility transistors (PHEMTs) and metal-semiconductor field-effect tr ansistors (MESFETs) has created a need for accurate modeling of these devices' behavior across a nide range of bias conditions. A novel simu lation technique enhances the well-known methods for direct linear ext raction of GaAs MESFETs (and extends their use to PHEMTs) by incorpora ting a mild bias dependence for selected model parameters. The techniq ue significantly reduces the overall error without convergence degrada tion when implemented within commercially-available simulators.