MODULATION BANDWIDTH OF HIGH-POWER SINGLE-QUANTUM-WELL BURIED HETEROSTRUCTURE INGAASP INP (LAMBDA=1.3 MU-M) AND INGAASP/GAAS (LAMBDA=0.8 MU-M) LASER-DIODES/

The construction of a high power single quantum well buried heterostru cture InGaAsP/InP (lambda=1.3 mu m) and InGaAsP/GaAs (lambda=0.8 mu m) laser diode with reduced values of parasitic capacitance has been pro posed and investigated. This design uses a 3.5 mu m thick polyimide la yer in the current confinement regions of the buried laser. The active area of the laser is surrounded by semiconductor material and the ent ire structure was grown by liquid phase epitaxy. Lasers with lambda=1. 3 mu m and resonator lengths of 310, 450, and 560 mu m exhibited modul ation bandwidths of 8.7, 9.2, and 6.6 GHz at operating powers of 41, 7 2, and 91 mW, respectively. Lasers with lambda=0.8 mu m and a 600 mu m resonator showed a 5.6 GHz modulation bandwidth at an output power of 98 mW. (C) 1996 American Institute of Physics.