1 F NOISE AS AN EARLY INDICATOR OF ELECTROMIGRATION DAMAGE IN THIN METAL-FILMS/

Authors
DAGGE K FRANK W SEEGER A STOLL H
Citation
K. Dagge et al., 1 F NOISE AS AN EARLY INDICATOR OF ELECTROMIGRATION DAMAGE IN THIN METAL-FILMS/, Applied physics letters, 68(9), 1996, pp. 1198-1200
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
9
Year of publication
1996
Pages
1198 - 1200
Database
ISI
SICI code
0003-6951(1996)68:9<1198:1FNAAE>2.0.ZU;2-N
Abstract
Electromigration in thin films of aluminium and aluminium alloys is sh own to lead to stepwise increases of the electrical 1/f noise. These a re attributed to the generation of highly mobile defect configurations by a nucleation-and-growth process. It is conjectured that among them may be the defects that are responsible for the eventual failure of V LSI electronic devices by electromigration damage. 1/f noise promises to be an early indicator of this damage. (C) 1996 American Institute o f Physics.