SYNTHESIS AND FERROELECTRIC PROPERTIES OF C-AXIS ORIENTED BI4TI3O12 THIN-FILMS BY SOL-GEL PROCESS ON PLATINUM COATED SILICON

c-axis oriented Bi4Ti3O12 films have been prepared on Pt/Ti/Si(111) su bstrates by sol-gel process. Crack-free films of 0.5 mu m thickness we re fabricated using a multilayer spinning technique and calcination at 600 degrees C for 30 min. The average grain size of the film is about 0.15 mu m. The film exhibits ferroelectric hysteresis with remanent p olarization P-r=4.8 mu c/cm(2) and coercive field E(c)=70 kV/cm. The m easured dielectric constant and loss factor at a frequency of 100 kHz are 170 and 0.02 respectively. (C) 1996 American Institute of Physics.