ULTRATHIN OXIDES USING N2O ON STRAINED SI1-XGEX LAYERS

Authors
MUKHOPADHYAY M RAY SK NAYAK DK MAITI CK
Citation
M. Mukhopadhyay et al., ULTRATHIN OXIDES USING N2O ON STRAINED SI1-XGEX LAYERS, Applied physics letters, 68(9), 1996, pp. 1262-1264
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
9
Year of publication
1996
Pages
1262 - 1264
Database
ISI
SICI code
0003-6951(1996)68:9<1262:UOUNOS>2.0.ZU;2-R
Abstract
Microwave N2O plasma oxidation of strained Si1-xGex layers at low temp erature (<200 degrees C) is reported. The hole confinement in accumula tion in a metal oxide semiconductor (MOS)-gated SiGe/Si heterostructur e has been confirmed by both simulation and experiments. Electrical pr operties are also discussed. (C) 1996 American Institute of Physics.