ROUGHENING KINETICS OF CHEMICAL-VAPOR-DEPOSITED COPPER-FILMS ON SI(100)

The roughening kinetics of copper films synthesized by low pressure ch emical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scali ng theory to the STM images, a steady growth roughness exponent alpha= 0.81+/-0.05 and a dynamic growth roughness exponent beta=0.62+/-0.09 w ere determined. The value of alpha is consistent with growth model pre dictions incorporating surface diffusion. The value of beta, while hig her than expected from these models, can be related to LPCVD processin g conditions favoring growth instabilities. (C) 1996 American Institut e of Physics.