INVESTIGATION OF ULTRA-THIN SINXOY LAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION WITH NRA AND CHANNELING-RBS

Near surface SiNxOy layers are produced by molecular ion implantation of (N2O+)-N-15-O-18 into c-Si at RT. N-15 and O-18 depth profiles are analysed by the resonant nuclear reactions N-15(p,alpha gamma)C-12 (E( res) = 429 keV; Gamma(res) = 120 eV) and O-18(p,alpha)N-15 (E(res) = 1 52 keV; Gamma(res) = 50 eV), respectively. The disorder at the SiNxOy/ Si interface is obtained by channeling-RES (He-4(+), E(0) = 1.7 MeV). After processing by electron beam rapid thermal annealing (peak temper ature T = 1100 degrees C for t = 15 s, ramping up and down 5 degrees C /s) no changes in the depth distributions are obtained, whereas the th ickness of the disordered region beneath the implanted layer decreases depending on the annealing process. The channeling-RES spectra are co mpared with spectra simulated by the MABIC code.