REDUCTION OF SECONDARY DEFECTS IN 50 KEV P-IMPLANTED SI(100) BY MEV SI ION IRRADIATION()

The reduction of secondary defects in 50 keV P+ implanted silicon has been studied by the Rutherford backscattering/channeling technique. It is found that the secondary defects in the P+ damaged region was redu ced by MeV Si ion irradiation. As for the case of low dose P+ ion impl antation in Si, the reduction of pre-amorphization defects was less se nsitive to the dose of MeV Si ions. However, in the higher dose P+ imp lanted sample, more end of range defects were reduced by a higher dose MeV Si ion irradiation. The gettering effect of extended defects for point defects is discussed.