SILICON-NITRIDE FILMS PRODUCED BY ION-BEAM-ASSISTED DEPOSITION - BULKAND NEAR-SURFACE COMPOSITION

Authors
GRIGOROV GI GRIGOROV KG BOUCHIER D VIGNES JL LANGERON JP
Citation
Gi. Grigorov et al., SILICON-NITRIDE FILMS PRODUCED BY ION-BEAM-ASSISTED DEPOSITION - BULKAND NEAR-SURFACE COMPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 108(1-2), 1996, pp. 85-86
Citations number
3
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
108
Issue
1-2
Year of publication
1996
Pages
85 - 86
Database
ISI
SICI code
0168-583X(1996)108:1-2<85:SFPBID>2.0.ZU;2-Q
Abstract
Experimental data on the nitrogen content in the films grown by ion-be am assisted deposition are compared to results given by an analytical estimate. The analytical expression used gives correct values for the film bulk nitrogen content and also describes the N concentration dept h profiles.