THE DEPENDENCE OF THE INVERSION SHEET RESISTANCE AND INDUCED JUNCTIONDEPTH UPON THE OPERATING-CONDITIONS FOR SILICON INVERSION LAYER SOLAR-CELLS

A numerical simulation method is formulated to investigate metal-insul ator-semiconductor inversion layer (MIS/IL) solar cells undergoing sol ar irradiance. It was found that the inversion sheet resistance and in duced junction depth are dependent upon the operating conditions. The semiconductor is assumed to be p-type silicon with a doping concentrat ion N-A = 3 x 10(16) cm(-3) and has an initial surface potential psi(I S) = 0.98 V caused by the positive charges in the insulator layer cove ring its surface. The solar cell is assumed to be undergoing AM(0) sol ar irradiance. It is found that the induced junction depth is approxim ately a linear function of the operating voltage over a wide operating voltage range. The induced junction depth decreases from 0.56 to 0.02 2 mu m when the operating voltage increases from 0.10 to 0.50 V. The i nversion sheet resistance has a minimum value for an operating voltage near 0.37 V.