ON THE VARIANCES OF GENERATION-RECOMBINATION NOISE IN A 3-LEVEL SYSTEM

A statistical treatment is given of the generation-recombination noise in a semiconductor with a conduction band and two traps X and Y. The system is described in terms of x and y, where x is half the harmonic mean of the numbers of occupied and empty traps X. A corresponding def inition is given for y. The use of x and y makes the formalism very tr ansparent. Simple, explicit relations are easily found, which can be f urther simplified by approximations depending on the ratios between N, x and y. We consider correlations and Burgess' theorem; time dependen ce and spectra are not discussed.