PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP

Authors
BENZAQUEN R CHARBONNEAU S LEONELLI R ROTH AP
Citation
R. Benzaquen et al., PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP, Physical review. B, Condensed matter, 53(7), 1996, pp. 3627-3629
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
7
Year of publication
1996
Pages
3627 - 3629
Database
ISI
SICI code
0163-1829(1996)53:7<3627:PTSOTD>2.0.ZU;2-6
Abstract
A detailed time-resolved photoluminescence study of the deep-donor bou nd-exciton-emission band frequently observed below the acceptor bound- exciton transition, in high-purity n-type InP grown by chemical-beam e pitaxy, has been performed. The decay lifetimes across the broad emiss ion band increase with increasing exciton localization energy. A theor y developed by Rashba and Gurgenishvili [Fiz. Tverd. Tela (Leningrad) 4, 1029 (1962)] [Sov. Phys, Solid State 4, 759 (1962)] which predicts a three-halves dependence of the exciton-localization energy on the bo und-exciton lifetimes has been observed in InP.