NUMERICAL COMPUTATION OF ELECTRONIC-PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM DEVICE APPLICATIONS

Authors
LAZZOUNI ME SHAM LJ
Citation
Me. Lazzouni et Lj. Sham, NUMERICAL COMPUTATION OF ELECTRONIC-PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM DEVICE APPLICATIONS, Compel, 14(2-3), 1995, pp. 129-137
Citations number
16
Categorie Soggetti
Mathematical Method, Physical Science","Computer Science Interdisciplinary Applications",Mathematics,"Engineering, Eletrical & Electronic
Journal title
Compel → ACNP
ISSN journal
03321649
Volume
14
Issue
2-3
Year of publication
1995
Pages
129 - 137
Database
ISI
SICI code
0332-1649(1995)14:2-3<129:NCOEOS>2.0.ZU;2-3
Abstract
We present a numerical self-consistent method to solve for the electro nic properties within a flexible and accurate theoretical model of sel ectively-doped semiconductor heterostructures based on a two-band k.P effective-mass-approximation Hamiltonian that includes non-parabolicit y, stress, piezoelectric, finite temperature, many-body, and DX center effects. The method can handle any planar configuration of heterostru ctures. Self-consistency is achieved quickly via Broyden's method.