RADIATION-RESISTANCE OF NEW OPTIC MATERIALS

Authors
VASILCHENKO VG KUPTSOV SI SOLOVEV AS BUCHINSKAYA II BYSTROVA AA ZHMUROVA ZI KRIVANDINA EA SOBOLEV BP KRECHKO YA MOTIN YD ANTIPOV AV
Citation
Vg. Vasilchenko et al., RADIATION-RESISTANCE OF NEW OPTIC MATERIALS, Instruments and experimental techniques, 38(4), 1995, pp. 445-452
Citations number
22
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
38
Issue
4
Year of publication
1995
Part
1
Pages
445 - 452
Database
ISI
SICI code
0020-4412(1995)38:4<445:RONOM>2.0.ZU;2-O
Abstract
Investigations of luminescence and radiation characteristics of a seri es of heavy crystals based on CdF2, BaF2, LaF3, Pb0.67Cd0.33F2, Na0.4Y b0.6F2.2, and Y3Al5O12, and a Phi-113 lead glass are presented. The ra diation resistance of crystals based on CdF2 doped with YbF3, BiF3, an d InF3 is more than 10 Mrad. We have also discovered that the relative light yield of Cd0.95Mn0.05F2 is similar to 20000 photon/MeV, its bas ic luminescence decay time is similar to 300 mu sec, and the luminesce nce spectrum has a maximum at about 550 nm.