ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF TITANIUM NITRIDE FROM TETRAKIS (DIETHYLAMIDO) TITANIUM AND AMMONIA

Titanium nitride (TiN) films were made from tetrakis (diethylamido) ti tanium (TDEAT) and ammonia by atmospheric pressure chemical vapor depo sition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia: TDEAT ratios. Films were characterized by four-point probe, Rutherford backscattering, for ward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT w as found to have a higher deposition efficiency (>1/3), and slower rea ction kinetics than the related Ti(NMe(2))(4) (TDMAT) compound. Higher temperatures and relative NH3 concentrations were necessary to achiev e similar growth rates. Though growth was slower than when using TDMAT , films from TDEAT had higher step coverage, lower resistivities (<100 0 mu Omega-cm) and were more stable with time. These films are promisi ng candidates for diffusion barriers in 0.25 mu m ULSI device technolo gies.