Jn. Musher et Rg. Gordon, ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF TITANIUM NITRIDE FROM TETRAKIS (DIETHYLAMIDO) TITANIUM AND AMMONIA, Journal of the Electrochemical Society, 143(2), 1996, pp. 736-744
Titanium nitride (TiN) films were made from tetrakis (diethylamido) ti
tanium (TDEAT) and ammonia by atmospheric pressure chemical vapor depo
sition (APCVD). Growth rates, stoichiometries, and resistivities were
studied as a function of temperature and ammonia: TDEAT ratios. Films
were characterized by four-point probe, Rutherford backscattering, for
ward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT w
as found to have a higher deposition efficiency (>1/3), and slower rea
ction kinetics than the related Ti(NMe(2))(4) (TDMAT) compound. Higher
temperatures and relative NH3 concentrations were necessary to achiev
e similar growth rates. Though growth was slower than when using TDMAT
, films from TDEAT had higher step coverage, lower resistivities (<100
0 mu Omega-cm) and were more stable with time. These films are promisi
ng candidates for diffusion barriers in 0.25 mu m ULSI device technolo
gies.