LUMINESCENCE AND REFLECTIVITY IN THE EXCITON REGION OF HOMOEPITAXIAL GAN LAYERS GROWN ON GAN SUBSTRATES

Authors
PAKULA K WYSMOLEK A KORONA KP BARANOWSKI JM STEPNIEWSKI R GRZEGORY I BOCKOWSKI M JUN J KRUKOWSKI S WROBLEWSKI M POROWSKI S
Citation
K. Pakula et al., LUMINESCENCE AND REFLECTIVITY IN THE EXCITON REGION OF HOMOEPITAXIAL GAN LAYERS GROWN ON GAN SUBSTRATES, Solid state communications, 97(11), 1996, pp. 919-922
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
97
Issue
11
Year of publication
1996
Pages
919 - 922
Database
ISI
SICI code
0038-1098(1996)97:11<919:LARITE>2.0.ZU;2-7
Abstract
In this work we report results of photoluminescence (PL) and reflectiv ity measurements in the exciton region of GaN homoepitaxial layers gro wn by metalorganic chemical vapour deposition on GaN substrates. At lo w temperature (4.2K), very narrow (FWHM = 1.OmeV) PL lines related to excitons bound to neutral acceptor (3.4666eV) and neutral donor (3.471 9eV) were observed. The energies of free excitons from reflectivity an d PL measurements were found to be: E(A) = 3.4780eV, E(B) = 3.4835eV a nd E(C) = 3.502eV.