FEATURES OF FINE-STRUCTURES OF EXCITON LUMINESCENCE BANDS IN THE CONFINED SEMICONDUCTOR SYSTEMS

Authors
MISKO VR
Citation
Vr. Misko, FEATURES OF FINE-STRUCTURES OF EXCITON LUMINESCENCE BANDS IN THE CONFINED SEMICONDUCTOR SYSTEMS, Solid state communications, 97(11), 1996, pp. 1003-1007
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
97
Issue
11
Year of publication
1996
Pages
1003 - 1007
Database
ISI
SICI code
0038-1098(1996)97:11<1003:FOFOEL>2.0.ZU;2-I
Abstract
A theory describing in an unified manner exciton transition rates in d ifferent dimensionality semiconductors is proposed, The transition rat es are shown to change critically in the sample region size of the ord er of the polariton wavelength. Peculiarities of fine structures of th e observed luminescence spectra of GaAs thin films were explained, The effective exciton dead layer was calculated.