Vr. Misko, FEATURES OF FINE-STRUCTURES OF EXCITON LUMINESCENCE BANDS IN THE CONFINED SEMICONDUCTOR SYSTEMS, Solid state communications, 97(11), 1996, pp. 1003-1007
A theory describing in an unified manner exciton transition rates in d
ifferent dimensionality semiconductors is proposed, The transition rat
es are shown to change critically in the sample region size of the ord
er of the polariton wavelength. Peculiarities of fine structures of th
e observed luminescence spectra of GaAs thin films were explained, The
effective exciton dead layer was calculated.