POLYCRYSTALLINE BETA-C3N4 THIN-FILMS DEPOSITED ON SINGLE-CRYSTAL KCL(100) USING RF-SPUTTERING

Authors
ZHANG ZB LI YA XIE SS YANG GZ
Citation
Zb. Zhang et al., POLYCRYSTALLINE BETA-C3N4 THIN-FILMS DEPOSITED ON SINGLE-CRYSTAL KCL(100) USING RF-SPUTTERING, Chinese Physics Letters, 13(1), 1996, pp. 69-72
Citations number
12
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
13
Issue
1
Year of publication
1996
Pages
69 - 72
Database
ISI
SICI code
0256-307X(1996)13:1<69:PBTDOS>2.0.ZU;2-J
Abstract
The carbon-nitride thin films were deposited on the (100) oriented sin gle-crystal KCl wafers at ambient temperatures by using rf-plasma sput tering. The IR spectrum showed that the films contained carbon-nitride bonds. The transmission electron microscopy (TEM) and x-ray diffracti on (XRD) measurements indicated the existence of predicted polycrystal line beta-C3N4 films on the KCl(100) wafers. And the TEM and XRD measu red lattice spacings well match the calculated data.