PREPARATION AND STRUCTURAL CHARACTERIZATION OF THIN EPITAXIAL BI2SR2CACU2O8-K RANGE(DELTA FILMS WITH T(C) IN THE 90)

Thin films of Bi2Sr2CaCu2O8+delta with T(c) up to 92 K were prepared b y an in situ sputtering method on SrTiO3 (100) and LaAlO3 (100) substr ates. A strong c-axis orientation of the film growth with low mosaic s pread and full epitaxy within the ab-plane were confirmed by X-ray dif fraction in Bragg-Brentano and four-circle geometry. Rutherford backsc attering and channeling confirm the correct film composition and highl y textured growth with a minimum yield of 23%. The surface morphology of the films was examined by STM and SEM studies, revealing a low dens ity of precipitates and the absence of screw dislocations. The depth p rofile of the composition was investigated by secondary neutrals mass spectroscopy (SNMS).