ACTIVATION-ENERGIES FOR THE FORMATION OF OXYGEN CLUSTERS RELATED TO THE THERMAL DONORS IN SILICON

Authors
HALLBERG T LINDSTROM JL
Citation
T. Hallberg et Jl. Lindstrom, ACTIVATION-ENERGIES FOR THE FORMATION OF OXYGEN CLUSTERS RELATED TO THE THERMAL DONORS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 13-15
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
13 - 15
Database
ISI
SICI code
0921-5107(1996)36:1-3<13:AFTFOO>2.0.ZU;2-6
Abstract
The formation of different oxygen clusters related to the thermal dono rs (TDs) in Czochralski-Si giving rise to IR vibrational modes were in vestigated after annealing in the range 350-470 degrees C. Activation energies for the formation of clusters related to TDs greater than or equal to TD2 were estimated to be about 1.6-1.9 eV, according to previ ous investigations, while a lower value of about 1.25 eV was found for the formation of TDl-related clusters. The activation energy for the growth of pre-existing clusters with a band at 1012 cm(-1) was estimat ed to be about 1.5 eV.