STRESS-INDUCED OXYGEN PRECIPITATION IN CZ-SI

Authors
MISIUK A SURMA B HARTWIG J
Citation
A. Misiuk et al., STRESS-INDUCED OXYGEN PRECIPITATION IN CZ-SI, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 30-32
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
30 - 32
Database
ISI
SICI code
0921-5107(1996)36:1-3<30:SOPIC>2.0.ZU;2-U
Abstract
Stress-induced oxygen precipitation effects in silicon were investigat ed after annealing as-grown Ct-Si samples at up to 1620 K under hydros tatic pressure up to 1.35 x 10(9) Pa. Depending on the treatment condi tions, uniform stress can considerably influence oxygen precipitation. An explanation of stress-stimulated oxygen precipitation is proposed.