INFLUENCE OF HYDROGEN AND OXYGEN ON THE MELT PROPERTIES AND THE CRYSTAL-GROWTH IN SILICON

The influence of hydrogen and oxygen on the density of the silicon mel t has been studied. The density of the oxygen-containing melt is ident ical with that without oxygen and shows an anomalous increase of the d ensity near the melting point. The melt density in an argon gas ambien t mixed with 7.15% hydrogen is equivalent to that in a pure argon gas at the melting temperature, but showed greater values at higher temper atures (1430-1500 degrees C). The density of the silicon melt at 1430 degrees C increases over 5 h after completion of melting. We found tha t such time-dependent change of the melt properties influences the for mation of grown-in defects during crystal growth.