OXYGEN DISTRIBUTION IN CZOCHRALSKI SILICON MELTS MEASURED BY AN ELECTROCHEMICAL OXYGEN SENSOR

Authors
SEIDL A MARTEN R MULLER G
Citation
A. Seidl et al., OXYGEN DISTRIBUTION IN CZOCHRALSKI SILICON MELTS MEASURED BY AN ELECTROCHEMICAL OXYGEN SENSOR, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 46-49
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
46 - 49
Database
ISI
SICI code
0921-5107(1996)36:1-3<46:ODICSM>2.0.ZU;2-8
Abstract
Oxygen concentration and distribution in Czochralski silicon melts wer e investigated by an electrochemical oxygen sensor, based on the solid ionic conductor zirconia. Crucible rotation was found to have a stron g influence on the oxygen distribution in the silicon melt. The forced convection driven by the crucible rotation dominates the oxygen trans port in the melt compared to diffusion. Concentration variations in th e melt measured during crystal growth were subsequently compared with changes of the oxygen content of the grown crystal.