DEFECT LEVELS IN N-SILICON AFTER HIGH-ENERGY AND HIGH-DOSE IMPLANTATION OF PROTON

Electrically active defects produced by MeV proton implantation at hig h doses (10(13) H+ cm(-2)) followed by subsequent annealing (400 degre es C, 5 min) into n-type silicon have been investigated using capacita nce voltage and deep level transient spectroscopy measurements on p(+) -n-n(+) diodes. It was found that the proton implantation followed by the annealing creates two shallow donor levels which are responsible f or the observed breakdown voltage reduction. An unusual defect reactio n observed after annealing has been reported. The amplitudes of the DL TS lines depend on the filling pulse length. Moreover, a minority carr ier injection during the DLTS scan has shown that a defect observed in the temperature range 165 to 250 K can exist in different metastable configurations.