THE NITROGEN-PAIR OXYGEN DEFECT IN SILICON

Authors
RASMUSSEN FB OBERG S JONES R EWELS C GOSS J MIRO J DEAK P
Citation
Fb. Rasmussen et al., THE NITROGEN-PAIR OXYGEN DEFECT IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 91-95
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
91 - 95
Database
ISI
SICI code
0921-5107(1996)36:1-3<91:TNODIS>2.0.ZU;2-K
Abstract
The nitrogen-pair oxygen defect in silicon has been studied by infrare d absorption spectroscopy on samples implanted with various combinatio ns of N-14, N-15, O-16 and O-17. The measurements give direct evidence for the involvement of nitrogen and oxygen in the defect and show tha t the impurity atoms comprising the defect are only weakly coupled. Ab initio cluster calculation on several models of the nitrogen-pair oxy gen defect have been performed and are compared with experiment. Based on these investigations a model consisting of a bridging oxygen atom adjacent to the nitrogen pair is suggested.