PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON

Authors
BUYANOVA IA HENRY A MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation
Ia. Buyanova et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 100-103
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
100 - 103
Database
ISI
SICI code
0921-5107(1996)36:1-3<100:PCOSPO>2.0.ZU;2-5
Abstract
We report on photoluminescence studies of defect formation and of subs equent annealing in silicon after SF6-O-2 plasma treatment. Substantia l damage of the near surface layer, caused by ion bombardment of the s ilicon surface, is observed, in spite of the high etch rate of SF6-O-2 plasma. The defects induced give rise to a broad PL band in the 0.70- 1.00 eV spectral range and sharp C and G lines. The mechanisms of defe ct formation and the role of oxygen contamination during SF6-O-2 react ive-ion etching in these processes are analyzed.