THE COMPLEXING OF OXYGEN WITH THE GROUP-II IMPURITIES BE, CD AND ZN IN SILICON

Authors
DALY SE MCGLYNN E HENRY MO CAMPION JD MCGUIGAN KG DOCARMO MC NAZARE MH
Citation
Se. Daly et al., THE COMPLEXING OF OXYGEN WITH THE GROUP-II IMPURITIES BE, CD AND ZN IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 116-119
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
36
Issue
1-3
Year of publication
1996
Pages
116 - 119
Database
ISI
SICI code
0921-5107(1996)36:1-3<116:TCOOWT>2.0.ZU;2-J
Abstract
The results of a photoluminescence study of the Group II elements Be, Cd and Zn in silicon show that oxygen-rich samples contain defects not observed in oxygen-lean material. Uniaxial stress and Zeeman measurem ents show that all the defect spectra are similar and pseudo-donor in nature. The defects are attributed to complexes of oxygen and the Grou p II impurity.